Apparatus and method for evaluating semiconductor device comprising thermal image processing

ABSTRACT

An apparatus for evaluating a semiconductor device includes: a chuck stage for fixing a semiconductor device; an insulating substrate; a plurality of probes fixed to the insulating substrate; a temperature adjustment unit adjusting temperatures of the plurality of probes; an evaluation/control unit causing a current to flow into the semiconductor device through the plurality of probes to evaluate an electric characteristic of the semiconductor device; an inspection plate having a front surface and a rear surface opposite to each other; a thermal image measurement unit acquiring a thermal image of the inspection plate when distal end portions of the plurality of probes are pressed against the front surface; and a thermal image processing unit performing image processing to the thermal image to obtain in-plane positions and temperatures of the distal end portions of the plurality of probes.

BACKGROUND OF THE INVENTION

Field

The present invention relates to an apparatus and method for evaluatinga semiconductor device which can easily accurately inspect the in-planepositions and temperatures of the distal end portions of a plurality ofprobes.

Description of the Related Art

Background

In a semiconductor wafer or chips obtained by cutting a semiconductorwafer into pieces, the electric characteristics of each semiconductordevice serving as an object to be measured is evaluated. In this case,after an installation surface of the object to be measured is broughtinto contact with a surface of a chuck stage and fixed thereto by vacuumsuction or the like, a probe to perform an electric input/outputoperation is brought into contact with an electrode formed on a part ofa non-installation surface of the object to be measured. In inspectionof a semiconductor device having a vertical structure which causes alarge current to the device in a vertical direction (out-of-planedirection), a chuck stage serves as an electrode. From the past, thenumber of pins of a probe is increased to meet a request of applicationof a large current and a high voltage.

In evaluation of the electric characteristics of a semiconductor device,accurate contact of a plurality of probes to an electrodes formed on asurface of a semiconductor device is important. Misalignment of thedistal end portion of a probe to be in contact with an electrode mayprevent a desired current or voltage from being applied to asemiconductor device. In addition to this, contact of the probe to aportion except for the electrode may break the semiconductor device.

A short probe is desired to suppress the distal end portion of the probefrom being misaligned. However, in order to suppress a dischargephenomenon, the probe tends to be elongated, and a distance between themain body of a probe guard and a semiconductor device tends to beincreased. Thus, the distal end portion of the probe may be easilymisaligned.

Under these circumstances, as a probe position measurement method, acontact-free method is known. For example, image processing measurementperformed by a camera installed to face a probe is known. However, whenthe position of the distal end portion of a probe is to be measured, aplurality of disturbance factors such as a background or a distance,focusing on respective targets, and influences of attachments make itdifficult to achieve accurate measurement.

For recent diversification of environments in which semiconductordevices are used, evaluation of electric characteristics in a widetemperature range from a low temperature to a high temperature isnecessary. When a chuck stage located on the semiconductor device sideis set at a low or high temperature, a temperature difference occurringbetween the chuck stage and a probe or a probe guard side causes thermalexpansion or thermal contraction of the probe guard, and the distal endportion of the probe being in contact with the semiconductor devicedisadvantageously misaligned. Furthermore, when the probe is broughtinto contact with the semiconductor device while the temperaturedifference is kept, the temperature of the device is different from aset temperature to disadvantageously deteriorate the accuracy of theevaluation.

Methods of inspecting a probe position include a method which observesthe position and size of a probe mark such that a probe is brought intocontact with a deformable body and then separated from the deformablebody (for example, see Japanese Unexamined Patent Publication No.2001-189353) and a method of eliminating a needle mark of a needle marktransferring member (for example, see Japanese Unexamined PatentPublication No. 2009-198407) are disclosed. As a method of evaluating asemiconductor device when the temperature of the semiconductor device isvariable, a method in which a heating sheet on which a resistor isdisposed is installed on a probe card to heat a probe circuit board isdisclosed (for example, Japanese Unexamined Patent Publication No.2012-47503). A method in which a halogen lamp is caused to face a probecircuit board and to irradiate light on the probe circuit board when achuck is retreated so as to heat the probe circuit board (for example,see Japanese Unexamined Patent Publication No. 2012-23120) is alsodisclosed. A method in which a ceramics heater disposed on a printedcircuit board configuring a probe card heats a probe circuit board isalso disclosed (for example, see Japanese Unexamined Patent PublicationNo. 2002-196017).

However, probe inspection according to Japanese Unexamined PatentPublication No. 2001-189353 requires a reproducing process for adeformable body in every probe inspection. In addition, observationafter transferring disadvantageously requires a long inspection time.The probe inspection is hard to be added to a conventional evaluationapparatus. Also in the needle mark transferring member in JapaneseUnexamined Patent Publication No. 2009-198407, although it is describedthat the mark is recovered within a short period of time, a reproducingprocess is still required. Furthermore, observation after transferringdisadvantageously requires a long inspection time.

Any of the Patent Documents does not describe temperature detection ofthe distal end portion of a probe being in contact with a semiconductordevice. Since measurement by a temperature sensor installed in eachapparatus targets the temperature of a probe circuit board, atemperature difference between the probe and the semiconductor device isunknown, and deterioration in evaluation accuracy caused by thetemperature difference poses a problem.

Only expansion and contraction of a probe circuit board areproblematically handled in terms of the in-plane position of the distalend portion of a probe being in contact with a semiconductor device. Aninitial positional defect of the probe occurring when a probe isinstalled on a probe circuit board and misalignment at a variabletemperature cannot be checked immediately before evaluation of asemiconductor device.

SUMMARY

The present invention has been made to solve the above problems, and hasas its object to obtain an apparatus and method for evaluating asemiconductor device which can easily accurately inspect the in-planepositions and temperatures of distal end portions of a plurality ofprobes.

According to the present invention, an apparatus for evaluating asemiconductor device includes: a chuck stage for fixing a semiconductordevice; an insulating substrate; a plurality of probes fixed to theinsulating substrate; a temperature adjustment unit adjustingtemperatures of the plurality of probes; an evaluation/control unitcausing a current to flow into the semiconductor device through theplurality of probes to evaluate an electric characteristic of thesemiconductor device; an inspection plate having a front surface and arear surface opposite to each other; a thermal image measurement unitacquiring a thermal image of the inspection plate when distal endportions of the plurality of probes are pressed against the frontsurface; and a thermal image processing unit performing image processingto the thermal image to obtain in-plane positions and temperatures ofthe distal end portions of the plurality of probes.

In the present invention, a thermal image of the inspection plateagainst which the distal end portions of the plurality of probes arepressed are acquired, and image processing is performed to the thermalimage to inspect the in-plane positions and the temperatures of thedistal end portions of the plurality of probes. Therefore, the in-planepositions and the temperatures of the distal end portions of theplurality of probes can be easily accurately inspected.

Other and further objects, features and advantages of the invention willappear more fully from the following description.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic view showing an apparatus for evaluating asemiconductor device according to Embodiment 1 of the present invention.

FIG. 2 is a schematic block diagram of a probe position/temperatureinspection apparatus according to the Embodiment 1 of the presentinvention in a probe contact state.

FIG. 3 is a side view for explaining an operation of the probe.

FIG. 4 is a diagram showing a thermal image of an inspection plateagainst which 16 probes placed at normal positions are pressed.

FIG. 5 is a diagram showing a thermal image of an inspection plateagainst which probes being at abnormal positions are pressed.

FIG. 6 is a schematic view showing an evaluation apparatus for asemiconductor device according to Embodiment 2 of the present invention.

FIG. 7 is a bottom view showing an inspection substrate according to theEmbodiment 2 of the present invention.

FIG. 8 is a bottom view showing a modification of the inspectionsubstrate according to the Embodiment 2 of the present invention.

DESCRIPTION OF EMBODIMENTS

An apparatus and method for evaluating a semiconductor device accordingto the embodiments of the present invention will be described withreference to the drawings. The same components will be denoted by thesame symbols, and the repeated description thereof may be omitted.

Embodiment 1

FIG. 1 is a schematic view showing an apparatus for evaluating asemiconductor device according to Embodiment 1 of the present invention.A chuck stage 1 fixes a semiconductor device 2 serving as an object tobe evaluated thereon. The chuck stage 1 is a pedestal which is broughtinto contact with an installation surface (rear surface) of thesemiconductor device 2 to fix the semiconductor device 2. A means forfixing the semiconductor device 2 is, for example, vacuum suction.However, the vacuum suction need not always be used, and electrostaticadsorption or the like may be used.

The semiconductor device 2 is a semiconductor wafer on which a pluralityof semiconductor chips are formed or a semiconductor chip itself. Inthis embodiment, the semiconductor device 2 has a vertical structure inwhich a large current is caused to flow in a vertical direction(out-of-plane direction) of the device. However, the semiconductordevice 2 need not always have the vertical structure, and may be asemiconductor device having a lateral structure in which an input/outputoperation is performed on one surface of the semiconductor device.

A plurality of probes 3 and a temperature adjustment unit 4 are fixed toan insulating substrate 5. The plurality of probes 3 and the temperatureadjustment unit 4 are connected to a connection unit 6 by a wire (notshown) such as a metal plate formed on the insulating substrate 5. Theplurality of probes 3, the temperature adjustment unit 4, the insulatingsubstrate 5, the connection unit 6, and the wire (not shown) constitutea probe base unit 7. The probe base unit 7 can be moved in an arbitrarydirection by a moving arm 8. The probe base unit 7 is configured to beheld by one moving arm 8 here. However, the configuration need notalways be used, and the probe base unit 7 may be stably held by aplurality of moving arms. In addition, the probe base unit 7 need notalways be moved, and the chuck stage 1 and the semiconductor device 2may be moved.

In evaluation of the semiconductor device 2 having the verticalstructure, the plurality of probes 3 are electrically connected tofront-surface electrodes disposed on a front surface of thesemiconductor device 2, and the chuck stage 1 is electrically connectedto a rear-surface electrode disposed on a rear surface of thesemiconductor device 2.

The temperature adjustment unit 4 adjusts the temperatures of theplurality of probes 3. The temperature adjustment unit 4, for example,as described in Japanese Unexamined Patent Publication No. 2013-229496,has an electrically heated wire winded on the probes 3 or a socket inwhich the probes 3 are disposed and a control unit for the electricallyheated wire. However, this configuration need not be always used, andthe temperature adjustment unit 4 may have another configuration.

The connection unit 6 of the insulating substrate 5 is connected to anevaluation/control unit 10 through a signal line 9. A surface of thechuck stage 1 is connected to the evaluation/control unit 10 through aconnection unit 11 disposed on a side surface of the chuck stage 1 and asignal line 12. The evaluation/control unit 10 causes a current to flowinto the semiconductor device 2 through the plurality of probes 3 toevaluate the electric characteristics of the semiconductor device 2.

The number of probes 3 for evaluation is set to two or more on theassumption that a large current (for example, 5 A or more) is applied.In order to make current densities applied to the probes 3 equal to eachother, distances between the connection unit 6 of the insulatingsubstrate 5 and the connection unit 11 of the chuck stage 1 through theprobes 3 are desired to be equal to each other. Thus, the connectionunit 6 and the connection unit 11 are desired to be disposed atpositions facing each other through the probes 3.

FIG. 2 is a schematic block diagram of a probe position/temperatureinspection apparatus according to the Embodiment 1 of the presentinvention in a probe contact state. A probe position/temperatureinspection apparatus 13 mainly includes an inspection plate 14, athermal image measurement unit 15, and a base unit 16 supporting thesecomponents.

The inspection plate 14 is made of a material having heat conductivity.Since the probe 3 is repeatedly pressed against the inspection plate 14every inspection, the inspection plate 14 is desirably made of amaterial having certain strength to avoid the inspection plate frombeing broken. For example, the inspection plate 14 is constituted by aplate having a thickness of several millimeters and made of a metalmaterial.

The thermal image measuring unit 15 is fixed to the base unit 16 througha fixing arm 17, and connected to a thermal image processing unit 19through a signal line 18. A protecting member 20 is disposed on an frontsurface of the inspection plate 14 against which the distal end portionsof the probes 3 are pressed. The protecting member 20 has a hardnesslower than that of the distal end portion of the probe 3. The protectingmember 20 is desirably a sheet material which has flexibility and can beeasily replaced, for example, a PVC sheet. However, the protectingmember 20 is not limited to the sheet.

The thermal image measurement unit 15 is a camera which acquires athermal image of the inspection plate 14 having a surface against whichthe distal end portions of the plurality of probes 3 are pressed, andalso a thermography. More specifically, the thermal images of the distalend portions of the plurality of probes 3 are indirectly acquiredthrough the inspection plate 14. At this time, since infrared rays areused to make it possible to exclude disturbance factors caused byvisible light, inspection accuracy can be easily improved.

The thermal image processing unit 19 performs image processing (imagerecognition) to a thermal image to obtain the in-plane positions andtemperatures of the distal end portions of the plurality of probes 3. Asa cooler for cooling the inspection plate 14, a blower 21 which sendsair toward the inspection plate 14 is disposed on a wall surface of thebase unit 16.

FIG. 3 is a side view for explaining an operation of the probe. Theprobe 3 includes a distal end portion 3 a which is in mechanical andelectric contact with a surface electrode of the semiconductor device 2,a barrel-like portion 3 b serving as a base fixed to the insulatingsubstrate 5, a plunger 3 d including a press-in portion 3 c which can beslid through a spring member such as a spring built in the probe 3 whenthe probe 3 is in contact with the electrode, and an electricallyconnecting portion 3 e electrically connected to the plunger 3 d andserving as an external output terminal. The probe 3 is made of amaterial having conductivity, for example, a metal material such ascopper, tungsten, or rhenium-tungsten. The material of the probe 3 isnot limited to these metal materials. In particular, in terms ofimprovement of conductivity, improvement of durability, or the like, thedistal end portion 3 a may be covered with another member made of, forexample, gold, palladium, tantalum, or platinum.

In an initial state in FIG. 3(a), when the probe 3 is moved downwardalong a Z axis toward the protecting member 20 disposed on the frontsurface of the inspection plate 14, first, the protecting member 20 andthe distal end portion 3 a are brought into contact with each other asshown in FIG. 3(b). When the probe 3 is further moved downward, as shownin FIG. 3(c), the press-in portion 3 c is pressed into the burrel-likeportion 3 b through the spring member to make it sure to be in contactwith the protecting member 20 disposed on the front surface of theinspection plate 14.

In this case, the probe 3 incorporates the spring member having asliding property in the Z-axis direction. However, this configurationneed not always be used, the probe 3 may include a spring memberdisposed outside the probe 3. The probe 3 is of a spring type in termsof suppression of electric discharge. However, the spring type need notalways be used, and a probe of a cantilever type, a laminated probe, awire probe, or the like may be used.

FIG. 4 is a diagram showing a thermal image of an inspection plateagainst which 16 probes placed at normal positions are pressed. When thedistal end portions 3 a of the probes 3 heated to a high temperature arepressed against the inspection plate 14, only the portions against whichthe distal end portions 3 a are pressed increase in temperature, and thefront surface of the inspection plate 14 has an uneven temperaturedistribution. For this reason, the portions against which the probes 3are pressed are photographed as a probe thermal image 22. FIG. 5 is adiagram showing a thermal image of an inspection plate against whichprobes being at abnormal positions are pressed. A defect occurs at aprobe position on the lower left in FIG. 5. When the defect at the probeposition is detected, an alarm is transmitted from the thermal imageprocessing unit 19 to the evaluation/control unit 10, a subsequentevaluation process is intermitted, and the probe 3 is checked.

Sequentially, an operation procedure of the evaluation apparatus for asemiconductor device according to the embodiment. The semiconductordevice 2 is fixed to the chuck stage 1 such that the installationsurface of the semiconductor device 2 is brought into contact with thechuck stage 1. The temperature of the semiconductor device 2 isincreased to an evaluation temperature by using a heater disposed on thechuck stage 1. The plurality of probes 3 are heated with the temperatureadjustment unit 4 to increase the temperature of the probes 3 to theevaluation temperature. The plurality of heated probes 3 are moved ontothe inspection plate 14 and pressed against the front surface of theinspection plate 14 with the same load as that in the evaluation. Inthis state, a thermal image of the inspection plate 14 is acquired bythe thermal image measurement unit 15. The thermal image processing unit19 performs image processing to the thermal image to obtain the in-planepositions and the temperatures of the distal end portions of theplurality of probes 3. In this manner, before the electric evaluation ofthe semiconductor device 2, the positions and the temperatures of thedistal end portions of the plurality of probes 3 are inspected.

When the in-plane positions or the temperatures of the distal endportions of the plurality of probes 3 are abnormal, the evaluationprocess is intermitted without evaluating electric characteristics, andthe probes 3 are inspected. When the in-plane positions or thetemperatures are normal, the plurality of probes 3 are moved onto thesemiconductor device 2 to bring the distal end portions of the pluralityof probes 3 into contact with the electrodes of the semiconductor device2, and the evaluation/control unit 10 causes a current into thesemiconductor device 2 through the plurality of probes 3 to evaluate theelectric characteristics of the semiconductor device 2.

The probe positions and the probe temperatures are inspected, and thedistal end portions of the plurality of heated probes 3 are separatedfrom the inspection plate 14. Thereafter, the blower 21 sends air to theinspection plate 14 to cool the inspection plate 14. The probe positionsand the probe temperatures are inspected in units of semiconductordevices to be evaluated or at a predetermined scheduled frequency.

As described above, in the embodiment, a thermal image of the inspectionplate 14 against which the distal end portions of the plurality ofprobes 3 are pressed are acquired, and image processing is performed tothe thermal image to inspect the in-plane positions and the temperaturesof the distal end portions of the plurality of probes 3. In this case,the semiconductor device 2 is evaluated in a state in which theplurality of probes 3 are pressed against the surface electrodesdisposed on the surface of the semiconductor device 2. Thus, since theprobe positions/temperatures are inspected in a state in which thedistal end portions of the plurality of probes 3 are pressed against thefront surface of the inspection plate 14 to make it possible toapproximately inspect the probe positions/temperatures in the evaluationof the electric characteristics of the semiconductor device 2, thepositions of the distal end portions of the plurality of probes 3 in theevaluation of the semiconductor device 2 can be known. A fluctuation ofheights of the distal end portions of the plurality of probes 3 isnegligible. Since a probe mark is unused, a deformable body and a needlemark transferring member are not required, and the inspection can beperformed while disturbance factors are suppressed. Furthermore, thetemperatures of the distal end portions of the probes 3 can also besimultaneously inspected. As a result, the in-plane positions and thetemperatures of the distal end portions of the plurality of probes 3 canbe easily accurately inspected. In addition, the accuracy of evaluationof the semiconductor device performed after the inspection is alsoimproved. Although the probe position/temperature inspection apparatus13 can also be independently used, since the probe position/temperatureinspection apparatus 13 can be easily added to a conventional evaluationapparatus, a conventional evaluation apparatus for a semiconductordevice can be directly used.

The thermal image measurement unit 15 is disposed on the rear surfaceside of the inspection plate 14. In this manner, since a state in whichthe distal end portions of the plurality of probes 3 are pressed againstthe front surface can be inspected in real time, accurate inspection canbe achieved.

The temperature of the inspection plate 14 with which the heated probes3 are brought into contact does not return to normal temperatureimmediately after the probes 3 are separated from the inspection plate14. Since an error may occur due to a thermal history when the nextinspection is performed without change, inspection accuracy isdeteriorated. Thus, inspection is performed, and the blower 21 forciblycools the inspection plate 14 after the heated probes 3 are separated.In this manner, the accuracy of the next inspection can be maintainedwithout being influenced by the previous inspection. Since theinspection plate 14 is cooled in advance, even in measurement performedat normal temperature without heating the probes 3, the probe positionscan be inspected. This configuration need not always be used, and analuminum member (heat sink) including heat-radiation fins may bedisposed on the inspection plate 14 as a cooler. The member need notalways be set, and may be configured to be brought into contact with theinspection plate 14 only after the probes 3 are separated from theinspection plate 14. The blower 21 and the heat-radiation fins can beeasily installed at low cost.

The protecting member 20 protects the front surface of the inspectionplate 14 against which the distal end portions of the probes 3 arepressed every inspection to make it possible to protect the distal endportions of the probes 3. When the protecting member 20 is damaged, onlythe protecting member 20 need only be replaced, and the inspection plate14 need not be replaced.

Since the inspection plate 14 is made of a high-strength metal material,the inspection plate 14 is hard to be broken even though the probes 3are repeatedly brought into contact with the inspection plate 14, andthe inspection plate 14 need not be replaced to contribute a reductionin cost. Furthermore, since the inspection plate 14 is excellent in heatconductivity, rapid measurement can be achieved. However, the inspectionplate 14 need not always be made of the metal material, and theinspection plate 14 may be made of a ceramics material. As long as ahigh-strength ceramics material is used, the inspection plate 14 is hardto be broken even though the probes 3 are repeatedly brought intocontact with the inspection plate 14, and the inspection plate 14 neednot be replaced to achieve a low cost. Ceramics which are excellent inthermal conductivity are selected to make it possible to achieve rapidmeasurement.

The inspection plate 14 may be made of a thermal anisotropic materialhaving thermal anisotropy in which a thermal conductivity direction isregulated to the Z direction. Since heat can be suppressed fromspreading in the plane of the inspection plate 14, the positions of thedistal end portions of the probes 3 can be accurately measured. As thethermal anisotropic material, for example, COMPOROID (product availablefrom Thermo Graphics Co., Ltd.) is known. However, the thermalanisotropic material is not limited to the product.

The inspection plate 14 and the base unit 16 are integrally configuredwith the same material to make it possible to reduce the cost, and theapparatus can be easily installed on a side surface of the chuck stage1. When a metal material is selected as the material, the apparatus canbe fabricated by bending.

The thermal image processing unit 19 and the probe position/temperatureinspection apparatus 13 are achieved by a processing circuit such as aCPU or a system LSI which executes a program stored in a memory. Aplurality of processing circuits may execute the functions incooperation with each other.

Embodiment 2

FIG. 6 is a schematic view showing an evaluation apparatus for asemiconductor device according to Embodiment 2 of the present invention.FIG. 7 is a bottom view showing an inspection substrate according to theEmbodiment 2 of the present invention.

The inspection plate 14 is the same member as that in the Embodiment 1,and peltiert elements 23 are disposed on both sides of the inspectionplate 14 as coolers for cooling the inspection plate 14. The apparatuscan be reduced in size by using the peltiert elements.

The thermal image measurement unit 15 is disposed on an insulatingsubstrate 5. Although a state in which the distal end portions of theprobes 3 are pressed against the front surface of the inspection plate14 is difficult to be measured because of interruption by the probes 3,measurement is performed after the probes 3 are separated. Although theinspection is impossible in real time, wires 9 and 18 are gathered nearthe insulating substrate 5 to make it possible to reduce the entireapparatus in size.

In inspection of the heated probes 3, the peltiert elements 23 are usedto cool the inspection plate 14 after the inspection. On the other hand,in inspection of the unheated probes 3 at normal temperature, thepeltiert elements 23 are used to cool the inspection plate 14 before theinspection. When the probes 3 at normal temperature are brought intocontact with the cooled inspection plate 14 before the inspection, thetemperature of a contact portion increases, and a temperaturedistribution on the front surface of the inspection plate 14 becomesuneven. In this case, the temperatures of the distal end portions of theprobes 3 do not pose a problem, and the positions of the probes 3 aredetected on the basis of the uneven temperature distribution.

According to the embodiment, as in the Embodiment 1, the in-planepositions and the temperatures of the distal end portions of theplurality of probes 3 can be easily accurately inspected before theevaluation of the semiconductor device. Not only when the probes 3 areheated or cooled but also when evaluation is performed at normaltemperature, the same advantage as described above can be obtained.

FIG. 8 is a bottom view showing a modification of the inspectionsubstrate according to the Embodiment 2 of the present invention. Inplace of the peltiert elements 23, heaters 24 for heating the inspectionplate 14 are disposed on both the sides of the inspection plate 14. Theinspection plate 14 is heated in advance of the inspection to make itpossible to inspect the probes 3 at normal temperature by the samemanner as described above.

As long as the peltiert elements 23 and the heaters 24 do not block athermal image from being acquired by the thermal image measurement unit15, the peltiert elements 23 and the heaters 24 may be installed oneither the front surface or the rear surface of the inspection plate 14.The installation positions of the peltiert elements and the heaters arenot limited to both the sides, and the peltiert elements 23 and theheaters 24 may be installed to surround a thermal image acquiringportion. When the numbers of peltiert elements and heaters are increasedto make it possible to shorten a heating time or a cooling time.

Obviously many modifications and variations of the present invention arepossible in the light of the above teachings. It is therefore to beunderstood that within the scope of the appended claims the inventionmay be practiced otherwise than as specifically described.

The entire disclosure of Japanese Patent Application No. 2015-186929,filed on Sep. 24, 2015 including specification, claims, drawings andsummary, on which the Convention priority of the present application isbased, is incorporated herein by reference in its entirety.

The invention claimed is:
 1. An apparatus for evaluating a semiconductordevice comprising: a chuck stage for fixing a semiconductor device; aninsulating substrate; a plurality of probes fixed to the insulatingsubstrate; a temperature adjustment unit adjusting temperatures of theplurality of probes; an evaluation/control unit causing a current toflow into the semiconductor device through the plurality of probes toevaluate an electric characteristic of the semiconductor device; aninspection plate having a front surface and a rear surface opposite toeach other; a thermal image measurement unit either disposed under arear surface of the inspection plate or attached to the insulatingsubstrate, the thermal image measurement unit acquiring a thermal imageof the inspection plate when distal end portions of the plurality ofprobes are pressed against the front surface; and a thermal imageprocessing unit performing image processing to the thermal image toobtain in-plane positions and temperatures of the distal end portions ofthe plurality of probes.
 2. The apparatus for evaluating a semiconductordevice of claim 1, wherein the thermal image measurement unit isdisposed on the rear surface side of the inspection plate.
 3. Theapparatus for evaluating a semiconductor device of claim 1, wherein thethermal image measurement unit is disposed on the insulating substrate.4. The apparatus for evaluating a semiconductor device of claim 1,further comprising a cooler cooling the inspection plate.
 5. Theapparatus for evaluating a semiconductor device of claim 4, wherein thecooler includes a blower sending air toward the inspection plate.
 6. Theapparatus for evaluating a semiconductor device of claim 4, wherein thecooler includes a heat-radiation fin disposed on the inspection plate.7. The apparatus for evaluating a semiconductor device of claim 4,wherein the cooler includes a peltier element disposed on the inspectionplate.
 8. The apparatus for evaluating a semiconductor device of claim1, further comprising a heater heating the inspection plate.
 9. Theapparatus for evaluating a semiconductor device of claim 1, furthercomprising a protecting member disposed on the front surface of theinspection plate and having a hardness lower than that of the distal endportions of the plurality of probes.
 10. The apparatus for evaluating asemiconductor device of claim 1, wherein the inspection plate is made ofa metal material.
 11. The apparatus for evaluating a semiconductordevice of claim 1, wherein the inspection plate is made of a ceramicmaterial.
 12. The apparatus for evaluating a semiconductor device ofclaim 1, wherein the inspection plate is made of a thermal anisotropicmaterial.
 13. The apparatus for evaluating a semiconductor device ofclaim 10, further comprising a base unit supporting the inspectionplate, wherein the inspection plate and the base unit are integrallyconfigured with same material.
 14. A method for evaluating asemiconductor device comprising: heating a plurality of probes fixed toan insulating substrate by a temperature adjustment unit; pressingdistal end portions of the plurality of heated probes against a frontsurface of an inspection plate and acquiring a thermal image of theinspection plate by a thermal image measurement unit that is eitherdisposed under a rear surface of the inspection plate or attached to theinsulating substrate; performing image processing to the thermal imageto obtain in-plane positions and temperatures of the distal end portionsof the plurality of probes by a thermal image processing unit; and whenthe in-plane positions or the temperatures of the plurality of probesare normal, bringing the distal end portions of the plurality of probesinto contact with electrodes of a semiconductor device and causing acurrent to flow into the semiconductor device through the plurality ofprobes by an evaluation/control unit to evaluate an electriccharacteristic of the semiconductor device.
 15. The method forevaluating a semiconductor device of claim 14, further comprising, afterseparating the distal end portions of the plurality of heated probesfrom the inspection plate, cooling the inspection plate by a cooler.